A Novel Imaging Mechanism to Determine the Ato

The research group at the University of Arkansas is interested in the surface physics of fabricating III-V semiconductor structures such as GaAs and InP. We are particularly interested in the fundamental properties, such as template structure, diffusion, nucleation and growth. The techniques used are STM, MBE, RHEED, Xray diffraction, and Hall effect (www.uark.edu/ misc/mbestm). The theoretical work was done at the Theory Department of the Fritz-Haber-Institute, Max-Planck-Gesellschaft in Berlin, Germany. This group uses densityfunctional theory calculations mainly for the investigation of the atomic and electronic structure of surfaces, as well as the dynamics of surface processes that constitute the atomistic basis of catalysis and crystal growth. The simulation of STM images forms part of this work as an important tool to study the reconstruction of surfaces (www.fhi-berlin.mpg.de/th/).